ITR20001/T Features
(1)Fast response time
(2)High analytic
(3)High sensitivity
(4)Cut-off visible wavelength λP=940nm
(5)Pb Free
(6)This product itself will remain within RoHS compliant version.
ITR20001/T Descriptions
The ITR20001/T consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing. The phototransistor receives radiation from the IR only . This is the normal situation. But when an reflecting object close to ITR , phototransistor receives the reflecting radiation .For additional component information, please refer to IR2424-3C and PT2424-6B.
ITR20001/T Applications
(1)Mouse Copier
(2)Switch Scanner
(3)Floppy disk driver
(4)Non-contact Switching
(5)For Direct Board
ITR20001/T Absolute Maximum Ratings (Ta=25℃)
Input Power Dissipation at(or below) 25℃ Free Air Temperature( Pd) 75mW
Input Reverse Voltage (VR) 5V
Input Forward Current ( IF) 50mA
Input Peak Forward Current ( IFP) 1.0 A
Output Collector Power Dissipation (PC) 75mW
Output Collector Current( IC) 20mA
Output Collector-Emitter Voltage (BVCEO) 30V
Output Emitter-Collector Voltage( BVECO) 5V
Operating Temperature (Topr) -40~+80 ℃
Storage Temperature (Tstg) -40~+85 ℃
Lead Soldering Temperature (Tsol )260 ℃≦5sec
ITR20001/T Electro-Optical Characteristics (Ta=25℃)
Input Forward Voltage VF ---(Typ)1.2~(Max )1.5 V ---IF=20mA
Input Reverse Current IR --- (Max)10uA--- VR=5V
Input Peak Wavelength λP ---(Typ) 940nm--- IF=20mA
Input View Angle 2θ1/2---(Typ)35Deg--- IF=20mA
Output Dark Current ICEO --- (Max)100nA--- VCE=5V,Ee=0mW/cm2
Output C-E Saturation voltage VCE(sat) ---(Max)0.4V---IC=0.04mA, IF=40mA
Transfer Characteristics Collector Current IC(ON) (Min.)0.2mA---VCE=5V, IF=20mA
Transfer Characteristics Leakage Current ICEOD---(Max)2uA---VCE=5V, IF=20mA
Transfer Characteristics Rise time tr --- (Typ)25 us--- VCE=5V IC=100uA RL=100Ω
Transfer Characteristics Fall time tf --- (Typ)25 us--- VCE=5V IC=100uA RL=100Ω